Manufacturer Part Number
SIR846DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
100V Drain to Source Voltage
-55°C to 150°C Operating Temperature
60A Continuous Drain Current @ 25°C
2,870pF Input Capacitance
25W Power Dissipation @ 25°C
Product Advantages
High Power Handling Capability
Low On-Resistance
High-Speed Switching
Efficient Thermal Management
Key Technical Parameters
Vdss: 100V
Vgs (Max): ±20V
Rds On (Max) @ 20A, 10V: 7.8mΩ
Ciss (Max) @ 50V: 2,870pF
Qg (Max) @ 10V: 72nC
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Quality and Safety Features
ROHS3 Compliant
PowerPAK SO-8 Packaging
Compatibility
Surface Mount Mounting
Application Areas
Power Conversion
Motor Drives
Industrial Controls
Automotive Electronics
Product Lifecycle
Current product, no discontinuation plans
Several Key Reasons to Choose This Product
High power handling and low on-resistance
Efficient thermal management
High-speed switching capability
Wide operating temperature range
Compact surface mount package
RoHS compliance for environmentally-friendly use