SIR850DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIR850DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

Product Features and Performance

N-Channel MOSFET

Drain-to-Source Voltage (Vdss) of 25V

Maximum Gate-to-Source Voltage (Vgs) of ±20V

Low On-Resistance (Rds(on)) of 7mΩ @ 20A, 10V

Continuous Drain Current (Id) of 30A @ 25°C

Input Capacitance (Ciss) of 1120pF @ 15V

Power Dissipation of 4.8W @ Ta, 41.7W @ Tc

Gate Charge (Qg) of 30nC @ 10V

Operating Temperature Range of -55°C to 150°C

Product Advantages

Low on-resistance for improved efficiency

High current handling capability

Compact PowerPAK SO-8 package for space-saving design

Suitable for high-frequency switching applications

Key Technical Parameters

Package: PowerPAK SO-8

Series: TrenchFET

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Vgs(th) (Max) of 3V @ 250A

Drive Voltage (Max Rds On, Min Rds On) of 4.5V, 10V

Quality and Safety Features

RoHS3 compliant

Compatibility

Suitable for a wide range of applications requiring high-performance, low on-resistance MOSFETs

Application Areas

Switching power supplies

Motor drives

Industrial controls

Automotive electronics

Product Lifecycle

Current product

Replacement and upgrade options may be available

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance and high current handling

Compact and efficient PowerPAK SO-8 package

Suitable for a variety of high-frequency switching applications

RoHS3 compliance for environmental considerations