Manufacturer Part Number
SIR870DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance, logic-level MOSFET
Product Features and Performance
Superior RDS(on) performance
High current handling capability
Low gate charge for fast switching
Optimized for synchronous rectification and other power conversion applications
Product Advantages
Excellent RDS(on) and power dissipation
Fast switching speed
Reliable and robust performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20 V
RDS On (Max) @ Id, Vgs: 6 mOhm @ 20 A, 10 V
Current Continuous Drain (Id) @ 25°C: 60 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V
Power Dissipation (Max): 6.25 W (Ta), 104 W (Tc)
Vgs(th) (Max) @ Id: 3 V @ 250 A
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Quality and Safety Features
RoHS3 Compliant
Reliable and robust design
Compatibility
Compatible with various power conversion and control applications
Application Areas
Synchronous rectification
Power conversion
Motor control
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements and upgrades are available.
Several Key Reasons to Choose This Product
Excellent RDS(on) and power dissipation performance
Fast switching speed for efficient power conversion
Reliable and robust design for demanding applications
Compatibility with a wide range of power conversion and control systems
Availability of replacements and upgrades for long-term support