Manufacturer Part Number
SIR876ADP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET for high-power, high-efficiency applications
Product Features and Performance
100V drain-to-source voltage rating
Low on-resistance down to 10.8mΩ
40A continuous drain current at 25°C
High-speed switching capability
Wide operating temperature range of -55°C to 150°C
Low gate charge of 49nC at 10V
Product Advantages
Excellent power efficiency
High power density
Reliable high-temperature operation
Optimized for fast, high-power switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 10.8mΩ @ 20A, 10V
Continuous Drain Current (Id): 40A @ 25°C
Input Capacitance (Ciss): 1630pF @ 50V
Power Dissipation (Pd): 5W @ 25°C (Ta), 62.5W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Compatible with a wide range of high-power, high-efficiency applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Telecommunications equipment
Renewable energy systems
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Reliable high-temperature operation
Fast, high-power switching capabilities
Optimized for a wide range of high-power, high-efficiency applications
RoHS3 compliance and AEC-Q101 qualification for quality and safety