Manufacturer Part Number
SIRA01DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This is a P-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from the TrenchFET Gen IV series, designed for a wide range of applications.
Product Features and Performance
30V Drain-to-Source Voltage (Vdss)
Maximum Vgs of +16V/-20V
Low On-Resistance (RDS(on)) of 4.9mΩ @ 15A, 10V
Continuous Drain Current (ID) of 26A (at Ta) and 60A (at Tc)
Input Capacitance (Ciss) of 3490pF @ 15V
Power Dissipation of 5W (at Ta) and 62.5W (at Tc)
Operating Temperature Range of -55°C to 150°C (TJ)
Product Advantages
Excellent power handling and efficiency
Low on-resistance for reduced power losses
Wide operating temperature range
Robust and reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Maximum Gate-to-Source Voltage (Vgs): +16V/-20V
On-Resistance (RDS(on)): 4.9mΩ @ 15A, 10V
Continuous Drain Current (ID): 26A (at Ta), 60A (at Tc)
Input Capacitance (Ciss): 3490pF @ 15V
Power Dissipation: 5W (at Ta), 62.5W (at Tc)
Quality and Safety Features
RoHS3 compliant
Qualified to the highest industry standards
Compatibility
This MOSFET is compatible with a wide range of electronic applications and circuits.
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
General-purpose power switching
Product Lifecycle
This MOSFET is currently in production and widely available. There are no plans for discontinuation or immediate replacement at this time.
Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
Wide operating temperature range for increased reliability
Robust and reliable performance for demanding applications
RoHS3 compliance for environmental safety
Compatibility with a wide range of electronic circuits and applications