SIRA12BDP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIRA12BDP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel TrenchFET Gen IV power MOSFET in PowerPAK SO-8 package

Product Features and Performance

N-channel MOSFET with extremely low on-resistance

Low gate charge for high-frequency switching

Fast switching speed

High current capability

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent thermal management due to PowerPAK SO-8 package

Robust design for reliable performance

Optimized for high-frequency, high-efficiency power conversion applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Vgs (Max): +20 V, -16 V

Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10 A, 10 V

Current Continuous Drain (Id) @ 25°C: 27 A (Ta), 60 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V

Power Dissipation (Max): 5 W (Ta), 38 W (Tc)

Vgs(th) (Max) @ Id: 2.4 V @ 250 A

Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V

Quality and Safety Features

ROHS3 compliant

Robust PowerPAK SO-8 package for reliable performance

Compatibility

Can be used in a wide range of power conversion and control applications

Application Areas

Switching power supplies

Motor drives

Industrial and consumer electronics

Automotive electronics

Product Lifecycle

Current product offering

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Excellent thermal management and reliability due to PowerPAK SO-8 package

High performance with low on-resistance and fast switching speed

Wide operating temperature range and high current capability

Suitable for high-frequency, high-efficiency power conversion applications