Manufacturer Part Number
SIRA14BDP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel MOSFET transistor
Part of the TrenchFET Gen IV series
Product Features and Performance
Drain to source voltage (Vdss) of 30V
On-resistance (Rds(on)) of 5.38mΩ at 10A, 10V
Continuous drain current (Id) of 21A at 25°C (Ta), 64A at 25°C (Tc)
Input capacitance (Ciss) of 917pF at 15V
Power dissipation of 3.7W at 25°C (Ta), 36W at 25°C (Tc)
Gate charge (Qg) of 22nC at 10V
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Compact PowerPAK SO-8 package
Key Technical Parameters
Operating temperature range: -55°C to 150°C (TJ)
Gate-source voltage (Vgs) range: +20V/-16V
Threshold voltage (Vgs(th)) of 2.2V at 250μA
Quality and Safety Features
RoHS3 compliant
Manufactured in a controlled environment
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Power conversion and management
Motor control
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and durable construction
Suitable for a variety of power management applications
Readily available from Vishay/Siliconix