Manufacturer Part Number
SIRA18BDP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance, low on-resistance N-channel MOSFET in a PowerPAK SO-8 package
Product Features and Performance
Optimized for high-frequency, high-power switching applications
Extremely low on-resistance of 6.83 mΩ at 10A, 10V
Wide operating temperature range of -55°C to 150°C
High continuous drain current of 19A at 25°C ambient, 40A at 25°C case
Low input capacitance of 680 pF at 15V
Maximum power dissipation of 3.8W at 25°C ambient, 17W at 25°C case
Product Advantages
Excellent thermal and electrical performance
Compact and efficient PowerPAK SO-8 package
Suitable for high-frequency, high-power switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs): +20V/-16V
On-Resistance (Rds(on)): 6.83 mΩ @ 10A, 10V
Continuous Drain Current (Id): 19A @ 25°C ambient, 40A @ 25°C case
Input Capacitance (Ciss): 680 pF @ 15V
Power Dissipation: 3.8W @ 25°C ambient, 17W @ 25°C case
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (PowerPAK SO-8)
Suitable for high-frequency, high-power switching applications
Application Areas
Switching power supplies
Motor drives
Class D audio amplifiers
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation plans
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent thermal and electrical performance
Compact and efficient package
Suitable for high-frequency, high-power switching applications
Wide operating temperature range
RoHS3 compliance for high-reliability applications
SIRA18ADP-T1-E3Electro-Films (EFI) / Vishay