Manufacturer Part Number
SIRA28BDP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel TrenchFET Power MOSFET, Gen IV Series
Product Features and Performance
Low on-resistance of 7.5 mOhm @ 10A, 10V
High continuous drain current of 18A (Ta) and 38A (Tc)
Low gate charge of 14 nC @ 10V
Wide operating temperature range of -55°C to 150°C (Tj)
Suitable for high-frequency and high-efficiency applications
Product Advantages
Excellent power density and efficiency
Reliable performance in harsh environments
Suitable for a wide range of power conversion applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss): 582 pF @ 15V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (PowerPAK SO-8)
Compatible with various power conversion and control systems
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable operation in harsh environments
Suitable for a wide range of power conversion applications
Easy to integrate into various systems due to the surface mount package