Manufacturer Part Number
SIRA32DP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel TrenchFET Gen IV power MOSFET
Product Features and Performance
Low on-resistance
High-speed switching
High current capability
Suitable for high-frequency, high-power applications
Product Advantages
Excellent power density
Improved efficiency
Reduced power losses
Enhanced thermal management
Key Technical Parameters
Drain to Source Voltage (Vdss): 25 V
Gate-Source Voltage (Vgs): +16V, -12V
On-Resistance (Rds(on)): 1.2 mΩ @ 15A, 10V
Continuous Drain Current (Id): 60A @ 25°C (Tc)
Input Capacitance (Ciss): 4450 pF @ 10 V
Power Dissipation (Pd): 65.7W @ Tc
Threshold Voltage (Vgs(th)): 2.2V @ 250A
Quality and Safety Features
RoHS3 compliant
Reliable performance
Robust design
Compatibility
Compatible with standard PowerPAK SO-8 package
Suitable for high-frequency, high-power applications
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Electric vehicles
Industrial and consumer electronics
Product Lifecycle
Current production, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power density and efficiency
Reduced power losses and improved thermal management
High current capability and reliability
Suitable for a wide range of high-frequency, high-power applications