SIRA60DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIRA60DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel TrenchFET Gen IV power MOSFET in PowerPAK SO-8 package

Product Features and Performance

Extremely low on-resistance for high efficiency

Tight Vth control for improved system reliability

Fast switching for high-frequency applications

Robust avalanche capability

Low gate charge for high-frequency, high-efficiency applications

Product Advantages

Excellent thermal resistance for efficient power dissipation

Compact PowerPAK SO-8 package for space-saving designs

Tight electrical parameter control for system optimization

Rugged and reliable design for demanding applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Vgs (Max): +20V, -16V

Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V

Current Continuous Drain (Id) @ 25°C: 100A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V

Power Dissipation (Max): 57W (Tc)

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability and safety-critical applications

Compatibility

Compatible with a wide range of electronic systems and devices

Application Areas

Switching power supplies

Motor drives

Industrial and automotive electronics

Telecommunications equipment

Portable electronics

Product Lifecycle

Currently in production

Replacement or upgrade options available from Vishay

Several Key Reasons to Choose This Product

Excellent efficiency and thermal performance

Compact and space-saving design

Tight parameter control for system optimization

Rugged and reliable for demanding applications

Compatibility with a wide range of systems and devices