Manufacturer Part Number
SIRA66DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET with low on-resistance and high current capability.
Product Features and Performance
Optimized for high-efficiency power conversion applications
Low on-resistance down to 2.3 mΩ
High current capability up to 50 A
Wide operating temperature range of -55°C to 150°C
Fast switching and high-frequency operation
Product Advantages
Exceptional power efficiency
Compact and space-saving design
Robust and reliable performance
Suitable for various power electronics applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs): +20 V, -16 V
Continuous Drain Current (Id): 50 A
On-Resistance (Rds(on)): 2.3 mΩ
Power Dissipation (Pd): 62.5 W
Gate Charge (Qg): 66 nC
Quality and Safety Features
RoHS3 compliant
Robust PowerPAK SO-8 package
Compatibility
Surface mount design
Suitable for various power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive electronics
Telecommunications equipment
Renewable energy systems
Product Lifecycle
Currently available for purchase
No plans for discontinuation or upgrades at this time
Key Reasons to Choose This Product
Exceptional power efficiency and performance
Compact and space-saving design
Robust and reliable performance
Wide operating temperature range
Suitable for a variety of power electronics applications