SIRA88DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIRA88DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This is a Vishay / Siliconix MOSFET transistor product.

Product Features and Performance

N-Channel MOSFET

TrenchFET Gen IV technology

30V drain-to-source voltage

5A continuous drain current at 25°C

Low on-resistance of 6.7mΩ at 10A, 10V

High input capacitance of 985pF at 15V

25W maximum power dissipation

Wide operating temperature range of -55°C to 150°C

Product Advantages

High current capability

Low on-resistance for efficient power conversion

Compact PowerPAK SO-8 surface mount package

Key Technical Parameters

Drain-to-source voltage (Vdss): 30V

Gate-to-source voltage (Vgs): +20V/-16V

On-resistance (Rds(on)): 6.7mΩ @ 10A, 10V

Drain current (Id): 45.5A @ 25°C

Input capacitance (Ciss): 985pF @ 15V

Power dissipation: 25W

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Designed for surface mount assembly

Application Areas

Power management

Power conversion

Motor control

Industrial and consumer electronics

Product Lifecycle

This is an active product

Replacement or upgrade options may be available

Key Reasons to Choose This Product

High current capability for efficient power handling

Low on-resistance for improved energy efficiency

Compact surface mount package for space-constrained designs

Wide operating temperature range for demanding applications

RoHS3 compliance for use in modern electronics