Manufacturer Part Number
SIRA99DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel MOSFET in the PowerPAK SO-8 package
Product Features and Performance
Trench MOSFET technology
Low on-resistance
High current capability
Low gate charge
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent power efficiency
Small footprint
High reliability
Suitable for high-power and high-frequency applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Maximum Gate-Source Voltage (Vgs): +16V/-20V
On-Resistance (Rds(on)): 1.7mΩ @ 20A, 10V
Continuous Drain Current (Id): 47.9A (Ta), 195A (Tc)
Input Capacitance (Ciss): 10,955pF @ 15V
Power Dissipation: 6.35W (Ta), 104W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Suitable for high-power and high-frequency applications
Compatibility
Surface mount package (PowerPAK SO-8)
Suitable for various power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact and reliable design
Suitable for a wide range of high-power and high-frequency applications
Proven Trench MOSFET technology from a reputable manufacturer
SIRB40DP-T1-GE3Vishay