Manufacturer Part Number
SIRA90DP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
High-Power N-Channel MOSFET Transistor
Product Features and Performance
100A Continuous Drain Current at 25°C
30V Drain-to-Source Voltage
8mOhm Maximum On-Resistance at 20A, 10V
153nC Maximum Gate Charge at 10V
Low Input Capacitance of 10180pF at 15V
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent Power Handling Capability
Extremely Low On-Resistance
Fast Switching Speed
Reliable High-Temperature Operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): +20V/-16V
On-Resistance (Rds(on)): 0.8mOhm @ 20A, 10V
Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 10180pF @ 15V
Power Dissipation (Pd): 104W @ Tc
Quality and Safety Features
RoHS3 Compliant
PowerPAK SO-8 Surface Mount Package
Compatibility
Can be used in a wide range of power electronics applications, including motor drives, power supplies, and industrial automation.
Application Areas
Motor Drives
Power Supplies
Industrial Automation
Inverters
Converters
Product Lifecycle
This product is currently in active production and availability is good. There are no plans for discontinuation at this time, and no known replacements or upgrades.
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency
High power handling capability
Reliable high-temperature operation
Fast switching speed for improved system performance
Compact PowerPAK SO-8 surface mount package
SIRA88DP-T1-GE3-GElectro-Films (EFI) / Vishay