Manufacturer Part Number
SIRA58DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
40V Drain-Source Voltage
60A Continuous Drain Current
65mΩ On-Resistance
3750pF Input Capacitance
75nC Gate Charge
-55°C to 150°C Operating Temperature
Surface Mount Package
Product Advantages
High Efficiency
Low On-Resistance
High Switching Speed
Wide Operating Temperature Range
Compact Surface Mount Package
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): +20V/-16V
On-Resistance (Rds(on)): 2.65mΩ
Continuous Drain Current (Id): 60A
Input Capacitance (Ciss): 3750pF
Gate Charge (Qg): 75nC
Power Dissipation (Pd): 27.7W
Quality and Safety Features
RoHS3 Compliant
Reliable MOSFET Technology
Compatibility
Compatible with various electronic circuits and applications
Application Areas
Power Conversion
Motor Control
Switching Power Supplies
Industrial Electronics
Automotive Electronics
Product Lifecycle
Current product
Replacement and upgrade options available
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved performance
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
Reliable MOSFET technology for long-lasting operation
RoHS3 compliance for environmental responsibility