Manufacturer Part Number
SIRA62DP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET
Part of the TrenchFET Gen IV series
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 30V
Voltage Rating (Vgs): +16V/-12V
On-Resistance (Rds(on)): 1.2mΩ @ 15A, 10V
Continuous Drain Current (Id): 51.4A (Ta), 80A (Tc)
Input Capacitance (Ciss): 4460pF @ 15V
Power Dissipation: 5.2W (Ta), 65.7W (Tc)
Fast switching speed and low gate charge
Product Advantages
Excellent power handling capability
Low on-resistance for improved efficiency
Compact PowerPAK SO-8 surface mount package
Key Technical Parameters
MOSFET Technology: N-Channel TrenchFET
Threshold Voltage (Vgs(th)): 2.2V @ 250mA
Drive Voltage: 4.5V (max Rds(on)), 10V (min Rds(on))
Gate Charge (Qg): 93nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Operating Temperature Range: -55°C to +150°C (TJ)
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product offering, no indication of discontinuation
Replacements and upgrades may be available in the TrenchFET Gen IV series
Key Reasons to Choose
Excellent performance in terms of power handling, efficiency, and switching speed
Compact and reliable surface mount package
Proven TrenchFET technology from a reputable manufacturer
