Manufacturer Part Number
SI2347DS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This is a P-Channel MOSFET transistor suitable for a variety of power management and switching applications.
Product Features and Performance
Trench MOSFET technology for low on-resistance and fast switching
Continuous drain current of 5A at 25°C case temperature
Low on-resistance of 42mΩ at 3.8A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 705pF at 15V
Low gate charge of 22nC at 10V
Product Advantages
Excellent power efficiency due to low on-resistance
Fast switching capabilities for high-frequency applications
Robust design with wide operating temperature range
Small SOT-23-3 package for compact designs
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs) Max: ±20V
Threshold Voltage (Vgs(th)) Max: 2.5V at 250μA
Power Dissipation (Tc): 1.7W
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
This MOSFET is compatible with a wide range of power management and switching applications.
Application Areas
Power supplies
Motor drives
Battery management systems
Switching circuits
Power amplifiers
Product Lifecycle
The SI2347DS-T1-GE3 is an active and widely available product. Vishay continues to manufacture and support this product line, and there are no plans for discontinuation.
Several Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance, enabling more compact and energy-efficient designs.
Fast switching capabilities for high-frequency applications, such as power supplies and motor drives.
Robust design with a wide operating temperature range, making it suitable for a variety of environmental conditions.
Small SOT-23-3 package allows for compact and space-saving circuit board layouts.
RoHS3 compliance and tape and reel packaging ensure compatibility with modern manufacturing processes.