Manufacturer Part Number
SI2343DS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This device is a P-channel enhancement-mode power MOSFET transistor.
Product Features and Performance
Trench technology for low on-resistance
High current capability up to 3.1A
Low on-resistance of 53mOhm
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 540pF
Maximum power dissipation of 750mW
Product Advantages
Efficient power switching
Compact surface mount package
Suitable for high-frequency applications
Robust and reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 3.1A
On-Resistance (Rds(on)): 53mOhm
Input Capacitance (Ciss): 540pF
Power Dissipation (Pd): 750mW
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Reliable performance in harsh environments
Compatibility
Compatible with standard SOT-23-3 (TO-236) footprint
Application Areas
Switch-mode power supplies
DC/DC converters
Motor drives
Telecommunications equipment
Industrial controls
Product Lifecycle
Currently in production
No indication of discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Efficient power switching with low on-resistance
Compact and reliable surface mount package
Suitable for high-frequency and high-temperature applications
RoHS3 compliance for environmental responsibility
Proven performance and compatibility with standard footprints