Manufacturer Part Number
SI2343DS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI2343DS-T1-E3 is a P-channel MOSFET transistor from Vishay Siliconix's TrenchFET series.
Product Features and Performance
MOSFET technology
P-channel type
Drain-to-source voltage (Vdss) of 30V
Maximum gate-to-source voltage (Vgs) of ±20V
On-resistance (Rds(on)) of 53mΩ @ 4A, 10V
Continuous drain current (Id) of 3.1A at 25°C
Input capacitance (Ciss) of 540pF @ 15V
Power dissipation of 750mW
Product Advantages
Low on-resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
Compact SOT-23-3 (TO-236) surface mount package
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 53mΩ @ 4A, 10V
Continuous drain current (Id): 3.1A @ 25°C
Input capacitance (Ciss): 540pF @ 15V
Power dissipation: 750mW
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Suitable for use in a variety of electronic circuits and applications requiring a P-channel MOSFET transistor
Application Areas
Power management circuits
Switching circuits
Motor control
Battery chargers
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade parts available from Vishay Siliconix
Key Reasons to Choose This Product
Low on-resistance for efficient power switching
Wide operating temperature range for reliability
Compact surface mount package for space-constrained designs
Proven TrenchFET technology from a reputable manufacturer
RoHS3 compliance for use in modern electronic products