Manufacturer Part Number
SI2343CDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Products, Transistors - FETs, MOSFETs - Single
Product Features and Performance
ROHS3 Compliant
Surface Mount Mounting Type
TrenchFET Series
P-Channel MOSFET
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Product Advantages
High performance TrenchFET MOSFET
Low on-resistance
High current capability
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Current Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Quality and Safety Features
ROHS3 Compliant
Compatibility
SOT-23-3 (TO-236) package
Surface Mount Mounting Type
Application Areas
Suitable for a wide range of applications, including power supplies, motor drivers, and various other power management circuits.
Product Lifecycle
Currently available, no discontinuation information provided.
Several Key Reasons to Choose This Product
High performance TrenchFET MOSFET with low on-resistance and high current capability.
Suitable for a wide range of applications in power electronics and power management.
ROHS3 compliant, ensuring environmental compliance.
Available in the widely used SOT-23-3 (TO-236) package with surface mount compatibility.
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