Manufacturer Part Number
SI2347DS-T1-BE3
Manufacturer
Vishay / Siliconix
Introduction
P-Channel Enhancement Mode MOSFET
Product Features and Performance
Low on-resistance
Fast switching speed
Low gate charge
High drain current capability
Wide operating temperature range
Product Advantages
Efficient power conversion
Improved energy efficiency
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 42mΩ @ 3.8A, 10V
Drain Current (Id): 3.8A (Ta), 5A (Tc)
Input Capacitance (Ciss): 705pF @ 15V
Power Dissipation: 1.2W (Ta), 1.7W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications
Compatibility
Surface mount package (SOT-23-3)
Compatible with various electronic circuits and systems
Application Areas
Power management circuits
Switching power supplies
Motor control applications
General-purpose power switching
Product Lifecycle
Current product offering
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and durable design
Compatibility with a wide range of applications
Compliance with industry safety and environmental standards