SI2351DS-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI2351DS-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

P-Channel MOSFET

Drain to Source Voltage (Vdss): 20 V

Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V

Current Continuous Drain (Id) @ 25°C: 2.8A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 5 V

Product Advantages

ROHS3 Compliant

Surface Mount Mounting Type

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: P-Channel

Manufacturer's packaging: SOT-23-3 (TO-236)

Package / Case: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: SOT-23-3 (TO-236)

Package: Cut Tape (CT)

Quality and Safety Features

ROHS3 Compliant

Compatibility

Suitable for various electronic circuits and applications requiring a P-Channel MOSFET with the given specifications.

Application Areas

Suitable for use in various electronic circuits and applications.

Product Lifecycle

The product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer or authorized distributors.

Key Reasons to Choose This Product

ROHS3 Compliant

Surface Mount Mounting Type

P-Channel MOSFET with suitable voltage, current, and capacitance ratings for various electronic applications.