Manufacturer Part Number
SI2365EDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
Power Rating: 1W (Ta), 1.7W (Tc)
Continuous Drain Current: 5.9A (Tc)
Drain-Source Voltage: 20V
Gate-Source Voltage: ±8V
On-Resistance: 32mΩ @ 4A, 4.5V
Gate Charge: 36nC @ 8V
Operating Temperature: -55°C to 150°C
Product Advantages
High power density
Efficient heat dissipation
Reliable performance
Key Technical Parameters
Transistor Technology: MOSFET (Metal Oxide)
Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Suitable for use in various power management, switching, and control circuits
Product Lifecycle
Active product, no discontinuation or replacement plans identified
Key Reasons to Choose This Product
Optimized power handling capabilities
Compact and efficient package design
Reliable and robust performance in harsh environments
Suitable for diverse electronic circuit applications
SI2365EDS-T1Vishay
SI2366DSMI