SI2367DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2367DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

A P-channel MOSFET transistor with TrenchFET technology, designed for a variety of power management and control applications.

Product Features and Performance

20V drain-to-source voltage rating

Low on-resistance of 66mOhm @ 2.5A, 4.5V

Continuous drain current of 3.8A at 25°C

Wide operating temperature range of -55°C to 150°C

Input capacitance of 561pF @ 10V

Power dissipation of 960mW (Ta) and 1.7W (Tc)

Gate charge of 23nC @ 8V

Product Advantages

Efficient power management due to low on-resistance

Wide temperature range for diverse applications

Compact SOT-23-3 surface mount package

Key Technical Parameters

P-channel MOSFET with TrenchFET technology

20V drain-to-source voltage

±8V gate-to-source voltage

66mOhm on-resistance @ 2.5A, 4.5V

8A continuous drain current at 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering in tape and reel packaging

Compatibility

Compatible with a wide range of power management and control applications.

Application Areas

Power supplies

Motor controls

Battery chargers

Portable electronics

Industrial controls

Product Lifecycle

This product is currently in production and available. No information on discontinuation or replacements.

Key Reasons to Choose This Product

Efficient power management with low on-resistance

Wide temperature range for diverse applications

Compact surface mount package

RoHS3 compliance for environmental friendliness

Availability in tape and reel packaging for automated assembly