Manufacturer Part Number
SI2369DS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
29mOhm On-Resistance (Rds(on)) at 5.4A, 10V
6A Continuous Drain Current (Id) at 25°C
1295pF Input Capacitance (Ciss) at 15V
25W Power Dissipation (Ta), 2.5W (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Compact SOT-23-3 package
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
5V Gate Threshold Voltage (Vgs(th)) at 250μA
5V to 10V Drive Voltage Range
36nC Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
Surface Mount Mounting Type
Application Areas
Power Management
Power Conversion
Motor Control
General Purpose Switching
Product Lifecycle
Currently available, no discontinuation planned.
Key Reasons to Choose
Excellent power efficiency with low on-resistance
High current capability for demanding applications
Compact and easy to integrate SOT-23-3 package
Wide operating temperature range
RoHS compliance for environmental sustainability