SI2374DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2374DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

N-Channel MOSFET

Trench Technology

Low On-Resistance

High Power Handling Capability

Fast Switching Speed

Wide Operating Temperature Range (-55°C to 150°C)

Product Advantages

Efficient Power Conversion

Reliable Performance

Compact Surface Mount Packaging

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Gate to Source Voltage (Vgs): ±8 V

On-Resistance (Rds(on)): 30 mΩ @ 4 A, 4.5 V

Drain Current (Id): 4.5 A (Ta), 5.9 A (Tc)

Input Capacitance (Ciss): 735 pF @ 10 V

Power Dissipation: 960 mW (Ta), 1.7 W (Tc)

Gate Charge (Qg): 20 nC @ 10 V

Quality and Safety Features

RoHS3 Compliant

Reliable Surface Mount Packaging (SOT-23-3)

Compatibility

Suitable for a wide range of power electronic applications

Application Areas

Power Supplies

Motor Drivers

Switching Circuits

Industrial Controls

Automotive Electronics

Product Lifecycle

Currently in active production

Replacements and upgrades available

Key Reasons to Choose This Product

Efficient power conversion with low on-resistance

Reliable performance across a wide temperature range

Compact surface mount packaging for space-constrained designs

Compliance with RoHS regulations for environmentally-conscious applications

Availability of replacements and upgrades to support long-term projects