Manufacturer Part Number
SI2377EDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET power MOSFET
Product Features and Performance
P-channel MOSFET with low on-resistance and fast switching
Suitable for high-frequency, high-current switching applications
Low gate charge for high-speed, high-efficiency switching
Product Advantages
Compact surface-mount package
Low on-resistance for low conduction losses
Fast switching for high-frequency operation
High current handling capability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20 V
Maximum Gate-to-Source Voltage (Vgs(max)): ±8 V
On-Resistance (Rds(on)): 61 mΩ @ 3.2 A, 4.5 V
Continuous Drain Current (Id): 4.4 A at 25°C
Quality and Safety Features
RoHS3 compliant
Halogen-free package
Compatibility
Surface mount package (SOT-23-3)
Suitable for high-frequency, high-current switching applications
Application Areas
Power management
Battery chargers
DC-DC converters
Motor drives
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
Excellent performance in high-frequency, high-current switching applications
Low on-resistance for efficient power conversion
Fast switching for high-efficiency operation
Compact surface-mount package for space-constrained designs
Reliable and RoHS3-compliant construction