SI2392DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2392DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel enhancement-mode power MOSFET in a small SOT-23 package

Product Features and Performance

Low on-resistance for low power loss

Fast switching speed

High current capability

Suitable for a wide range of power management and switching applications

Product Advantages

Compact size for space-constrained designs

Efficient power conversion and control

Robust and reliable performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 100V

Gate to Source Voltage (Vgs): ±20V

On-resistance (Rds(on)): 126mΩ @ 2A, 10V

Continuous Drain Current (Id): 3.1A @ 25°C

Input Capacitance (Ciss): 196pF @ 50V

Power Dissipation: 1.25W (Ta), 2.5W (Tc)

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

Compatible with a wide range of power management and switching applications

Application Areas

Power supplies

Motor drives

Switching regulators

Amplifiers

Battery chargers

Product Lifecycle

Currently available

No known discontinuation plans

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Excellent performance-to-size ratio

Efficient power conversion and control

Reliable and robust operation

Suitable for a wide range of power management and switching applications

Compact size for space-constrained designs