SI2399DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2399DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI2399DS-T1-GE3 is a high-performance P-channel MOSFET transistor from Vishay/Siliconix.

Product Features and Performance

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology

P-channel configuration

20V drain-to-source voltage rating

6A continuous drain current (at 25°C)

34 milliohm maximum on-resistance at 5.1A, 10V

835 pF maximum input capacitance at 10V

5W maximum power dissipation (at 25°C)

-55°C to 150°C operating temperature range

Product Advantages

High efficiency and low power loss

Fast switching speed

Small and compact surface-mount package

Suitable for a wide range of applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs): ±12V

On-Resistance (Rds(on)): 34 milliohm @ 5.1A, 10V

Drain Current (Id): 6A (at 25°C)

Input Capacitance (Ciss): 835 pF @ 10V

Power Dissipation (Pd): 2.5W (at 25°C)

Quality and Safety Features

RoHS3 compliant

Meets environmental and safety standards

Compatibility

Surface mount package (SOT-23-3)

Suitable for a wide range of electronic circuits and applications

Application Areas

Power management circuits

Switching circuits

Motor control

Battery chargers

Automotive electronics

Industrial equipment

Product Lifecycle

Current production model

Replacement and upgrade options available

Key Reasons to Choose This Product

High efficiency and low power loss for improved system performance

Fast switching capability for high-speed applications

Small and compact surface-mount package for space-constrained designs

Wide operating temperature range for diverse environmental conditions

RoHS3 compliance for environmentally friendly applications

Proven reliability and quality from Vishay/Siliconix