Manufacturer Part Number
SI2393DS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
TrenchFET Gen IV Technology
Low On-Resistance
Fast Switching Speed
High Drain Current Capability
Product Advantages
Efficient Power Conversion
Compact Surface Mount Package
Reliable High-Temperature Operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): +16V/-20V
On-Resistance (Rds(on)): 22.7mΩ @ 5A, 10V
Drain Current (Id): 6.1A (Ta), 7.5A (Tc)
Input Capacitance (Ciss): 980pF @ 15V
Power Dissipation: 1.3W (Ta), 2.5W (Tc)
Gate Charge (Qg): 25.2nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Reliable Operation from -55°C to 150°C
Compatibility
SOT-23-3 (TO-236) Surface Mount Package
Application Areas
Power Management Circuits
DC-DC Converters
Motor Drives
Switching Power Supplies
Product Lifecycle
Current Production
Replacements and Upgrades Available
Key Reasons to Choose
Efficient Power Conversion
High Reliability and Thermal Performance
Compact Surface Mount Package
Ease of Integration into Power Systems