SI2387DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2387DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI2387DS-T1-GE3 is a P-channel MOSFET transistor from Vishay / Siliconix's TrenchFET Gen IV series.

Product Features and Performance

80V Drain-Source Voltage (Vdss)

±20V Gate-Source Voltage (Vgs)

164mΩ On-Resistance (Rds(on)) @ 2.1A, 10V

1A Continuous Drain Current (Id) at 25°C

395pF Input Capacitance (Ciss) at 40V

3W Power Dissipation at 25°C

2nC Gate Charge (Qg) at 10V

Product Advantages

MOSFET technology for efficient power switching

TrenchFET Gen IV design for improved performance

Low on-resistance for low power loss

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

P-Channel MOSFET

Vdss: 80V

Vgs(max): ±20V

Rds(on) (max): 164mΩ @ 2.1A, 10V

Id (continuous): 2.1A at 25°C

Quality and Safety Features

RoHS3 compliant

Packaged in a reliable SOT-23-3 (TO-236) surface mount package

Compatibility

SOT-23-3 (TO-236) package footprint

Application Areas

Power switching circuits

Motor control

Power management

General purpose electronics

Product Lifecycle

Currently in production

Replacement parts and upgrades available

Key Reasons to Choose This Product

Efficient power switching performance

Low on-resistance for low power loss

Wide operating temperature range

Reliable surface mount packaging

RoHS3 compliant for environmental compatibility

Availability of replacement parts and upgrades