SI2372DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2372DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

N-Channel MOSFET Transistor

Product Features and Performance

Trench MOSFET technology

30V Drain-to-Source Voltage

4A Continuous Drain Current (Ta), 5.3A (Tc)

Low On-Resistance: 33mOhm @ 3A, 10V

Fast Switching Speed

Wide Operating Temperature: -55°C to 150°C

Product Advantages

Efficient power conversion and control

Compact surface-mount package

Suitable for a wide range of applications

Key Technical Parameters

Vds: 30V

Vgs (Max): ±20V

Rds(on) (Max): 33mOhm @ 3A, 10V

Ciss (Max): 288pF @ 15V

Pd (Max): 960mW (Ta), 1.7W (Tc)

Vgs(th) (Max): 2.5V @ 250A

Qg (Max): 8.9nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Reliable Trench MOSFET technology

Compatibility

Surface Mount Package: SOT-23-3 (TO-236)

Application Areas

Power conversion and control circuits

Switching applications

General purpose amplifier and driver circuits

Product Lifecycle

Current product, no known discontinuation

Key Reasons to Choose This Product

Efficient power handling with low on-resistance

Compact surface-mount package

Wide operating temperature range

Reliable Trench MOSFET technology

Suitable for a variety of power control and switching applications