SI2371EDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2371EDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

P-Channel MOSFET

30V Drain to Source Voltage

8A Continuous Drain Current

45mOhm On-Resistance

-55°C to 150°C Operating Temperature Range

1W Power Dissipation (Ta), 1.7W (Tc)

35nC Gate Charge at 10V

Trench MOSFET Technology

Product Advantages

Compact SOT-23 Surface Mount Package

RoHS Compliant

Tape and Reel Packaging

Key Technical Parameters

Vdss: 30V

Vgs(max): ±12V

Rds(on) max: 45mOhm @ 3.7A, 10V

Id(cont) @ 25°C: 4.8A (Tc)

Pd(max): 1W (Ta), 1.7W (Tc)

Vgs(th) max: 1.5V @ 250uA

Drive Voltage: 2.5V (max Rds(on)), 10V (min Rds(on))

Qg(max) @ 10V: 35nC

Quality and Safety Features

RoHS3 Compliant

Compatibility

TO-236-3, SC-59, SOT-23-3 Package

Compatible with various circuit designs requiring a P-Channel MOSFET

Application Areas

Suitable for use in power management, switching, and control circuits

Product Lifecycle

Current product, no indication of discontinuation

Key Reasons to Choose

Compact SOT-23 surface mount package

Low on-resistance for efficient power handling

Wide operating temperature range

RoHS compliance for environmentally-friendly use

Tape and reel packaging for automated assembly