Manufacturer Part Number
SI2369BDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET® power MOSFET in a compact SOT-23-3 package.
Product Features and Performance
Low on-resistance (27 mOhm max @ 5 A, 10 V)
Low input capacitance (745 pF max @ 15 V)
Fast switching speed
Robust avalanche capability
High power density
Suitable for high-frequency switching applications
Product Advantages
Excellent power efficiency
Small size and low profile
Reliable operation in harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs): +16 V / -20 V
Continuous Drain Current (Id): 5.6 A (Ta), 7.5 A (Tc)
Power Dissipation: 1.3 W (Ta), 2.5 W (Tc)
Operating Temperature: -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Reliable and rugged design
Compatibility
Suitable for surface mount applications
Application Areas
Switching power supplies
Point-of-load converters
Motor drives
Automotive electronics
Industrial controls
Product Lifecycle
This product is still in active production
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Small size and low profile
Reliable operation in harsh environments
Robust avalanche capability
Suitable for high-frequency switching applications