SI2366DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2366DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This is a discrete N-Channel MOSFET transistor from Vishay Siliconix's TrenchFET series.

Product Features and Performance

30V Drain-Source Voltage (Vdss)

Max 36mOhm On-Resistance (Rds(on)) at 4.5A, 10V

8A Continuous Drain Current (Id) at 25°C

335pF Input Capacitance (Ciss) at 15V

25W Power Dissipation at 25°C, 2.1W at Case Temperature

Operating Temperature Range: -55°C to 150°C

Product Advantages

High current handling capability

Low on-resistance for efficient power conversion

Compact SOT-23-3 surface mount package

Key Technical Parameters

N-Channel MOSFET

30V Drain-Source Voltage

±20V Gate-Source Voltage

5V Gate Threshold Voltage at 250µA

10V Drive Voltage Range for Rds(on) Optimization

Quality and Safety Features

RoHS3 Compliant

AEC-Q101 Qualified

Compatibility

This MOSFET is compatible with a wide range of electronic circuits and power conversion applications.

Application Areas

Power supplies

Motor drives

Switching regulators

Class D audio amplifiers

General purpose switching

Product Lifecycle

This product is currently in active production and not nearing discontinuation. Replacement or upgrade options are available from Vishay Siliconix.

Key Reasons to Choose This Product

High current handling and low on-resistance for efficient power conversion

Compact surface mount package for space-constrained designs

Wide operating temperature range for harsh environments

Proven reliability and quality from a leading semiconductor manufacturer