SI2356DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2356DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

N-Channel MOSFET Transistor

Product Features and Performance

Trench MOSFET technology

40V Drain-Source Voltage

Low on-resistance (51mOhm @ 3.2A, 10V)

Low gate charge (13nC @ 10V)

Wide operating temperature range (-55°C to 150°C)

High current capability (4.3A continuous drain current at 25°C)

Product Advantages

Efficient power conversion and control

Compact surface mount packaging

Suitable for a variety of power management applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 40V

Gate-Source Voltage (Vgs): ±12V

On-resistance (Rds(on)): 51mOhm @ 3.2A, 10V

Continuous Drain Current (Id): 4.3A @ 25°C

Input Capacitance (Ciss): 370pF @ 20V

Power Dissipation: 960mW (Ta), 1.7W (Tc)

Gate Charge (Qg): 13nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for various surface mount packages (SOT-23-3)

Compatibility

Compatible with a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Switching regulators

General purpose power switching

Product Lifecycle

Current production model

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High efficiency and low power losses

Compact surface mount design

Wide operating temperature range

Robust and reliable performance

Suitable for a variety of power management applications