Manufacturer Part Number
SI2342DS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Vishay's SI2342DS-T1-GE3 is a high-performance N-Channel MOSFET transistor designed for a wide range of power management and switching applications.
Product Features and Performance
Trench MOSFET technology
Low on-resistance of 17 milliohms at 7.2A and 4.5V gate drive
Continuous drain current of 6A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1070 pF at 4V
Maximum gate-source voltage of ±5V
Fast switching speed and low gate charge of 15.8 nC at 4.5V
Product Advantages
Efficient power conversion and management
Compact surface mount package
Reliable performance in harsh environments
Optimized for high-frequency, high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 8V
Gate-Source Voltage (Vgs): ±5V
On-Resistance (Rds(on)): 17 milliohms
Continuous Drain Current (Id): 6A
Input Capacitance (Ciss): 1070 pF
Power Dissipation (Ptot): 2.5W
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 automotive standards
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Switching regulators
Battery management systems
Industrial and consumer electronics
Product Lifecycle
Current production part
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact and reliable surface mount package
Wide operating temperature range
Automotive-grade quality and reliability
Optimized for high-frequency, high-current applications
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