Manufacturer Part Number
SI2338DS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel MOSFET transistor with trench technology for high-efficiency power conversion applications.
Product Features and Performance
Trench MOSFET technology for low on-resistance and high current capability
Optimized for high-frequency, high-efficiency power conversion
Low gate charge and fast switching for improved efficiency
Low input capacitance for easy drive
Product Advantages
Excellent on-resistance to size ratio for efficient power conversion
Fast switching and low gate charge for high-frequency operation
Compact surface-mount package enables high-density designs
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 28mΩ @ 5.5A, 10V
Continuous Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 424pF @ 15V
Power Dissipation: 1.3W @ 25°C, 2.5W @ 100°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with various control ICs and gate driver circuits
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Class-D audio amplifiers
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available as technology improves
Key Reasons to Choose This Product
Excellent efficiency and power density for high-frequency power conversion
Fast switching and low gate charge for improved system performance
Compact surface-mount package enables high-density designs
Proven reliability and quality for critical applications