SI2337DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2337DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single

Product Features and Performance

P-Channel MOSFET

80V Drain to Source Voltage

270mOhm Max On-Resistance @ 1.2A, 10V

2A Continuous Drain Current @ 25°C

500pF Max Input Capacitance @ 40V

17nC Max Gate Charge @ 10V

-50°C to 150°C Operating Temperature Range

Product Advantages

Low On-Resistance for Efficient Power Switching

High Voltage Capability

Surface Mount Packaging for Compact Designs

Wide Operating Temperature Range

Key Technical Parameters

Drain to Source Voltage (Vdss): 80V

Gate to Source Voltage (Vgs Max): ±20V

On-Resistance (Rds On Max): 270mOhm

Continuous Drain Current (Id): 2.2A

Input Capacitance (Ciss Max): 500pF

Gate Charge (Qg Max): 17nC

Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)

Quality and Safety Features

RoHS3 Compliant

Trench MOSFET Technology

Compatibility

SOT-23-3 (TO-236) Package

Compatible with Surface Mount Assembly

Application Areas

Power Switching

Amplifiers

Motor Drives

Power Supplies

Product Lifecycle

Current product, no indication of discontinuation

Replacements and upgrades may be available

Key Reasons to Choose

Low On-Resistance for Efficient Power Switching

High Voltage Capability up to 80V

Wide Operating Temperature Range (-50°C to 150°C)

Compact Surface Mount Packaging

RoHS3 Compliance for Environmental Responsibility