Manufacturer Part Number
SI2336DS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - N-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance (Rds(on))
High power density
Fast switching speed
Low gate charge
Suitable for high-frequency applications
Operates over a wide temperature range (-55°C to 150°C)
Product Advantages
Improved efficiency in power conversion circuits
Reduced power losses
Compact design
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 42mΩ @ 3.8A, 4.5V
Continuous Drain Current (Id): 5.2A (Tc)
Input Capacitance (Ciss): 560pF @ 15V
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Quality and Safety Features
ROHS3 Compliant
Surface Mount (SOT-23-3) package
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power management circuits
Switching power supplies
Motor drives
Battery chargers
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance in power conversion applications
Low power losses and high efficiency
Compact and reliable design
Wide temperature range operation
Suitable for high-frequency switching applications