Manufacturer Part Number
SI2333DS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
P-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance (Rds(on)) of 32 mΩ
High continuous drain current of 4.1 A
Wide operating temperature range of -55°C to 150°C
High input capacitance of 1100 pF
Low gate charge of 18 nC
Product Advantages
Efficient power delivery
Reliable operation in harsh environments
Compact and space-saving design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 12 V
Gate-to-Source Voltage (Vgs): ±8 V
On-Resistance (Rds(on)): 32 mΩ
Continuous Drain Current (Id): 4.1 A
Input Capacitance (Ciss): 1100 pF
Power Dissipation (Max): 750 mW
Quality and Safety Features
RoHS3 compliant
Reliable performance in surface mount applications
Compatibility
Suitable for a wide range of electronic devices and applications
Application Areas
Power management circuits
Switching power supplies
Motor control systems
Portable electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Efficient power handling capabilities
Reliable operation in demanding environments
Compact and space-saving design
Compliance with RoHS3 regulations
Availability of replacement and upgrade options
SI2333DS-T1Electro-Films (EFI) / Vishay