Manufacturer Part Number
SI2333DS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Vishay Siliconix SI2333DS-T1-E3 is a P-Channel MOSFET transistor designed for high-performance, high-efficiency power management applications.
Product Features and Performance
Trench MOSFET technology
Low on-resistance of 32 mΩ at 5.3 A, 4.5 V
Continuous drain current of 4.1 A at 25°C
High input capacitance of 1100 pF at 6 V
Maximum power dissipation of 750 mW at 25°C
Operating temperature range of -55°C to 150°C
Product Advantages
Efficient power management
Small footprint and surface-mount design
Reliable performance in a wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 12 V
Gate-Source Voltage (Vgs): ±8 V
Threshold Voltage (Vgs(th)): 1 V at 250 μA
Gate Charge (Qg): 18 nC at 4.5 V
Quality and Safety Features
RoHS3 compliant
Manufactured in a certified quality management system
Compatibility
Compatible with various power management and control applications
Application Areas
Power supplies
DC-DC converters
Motor drives
Battery chargers
General-purpose switching applications
Product Lifecycle
The SI2333DS-T1-E3 is an active product and not nearing discontinuation.
Replacement or upgrade options may be available from Vishay Siliconix.
Key Reasons to Choose This Product
Excellent power efficiency and performance
Robust design for reliable operation in harsh environments
Small and surface-mount package for space-constrained designs
Wide availability and support from a trusted manufacturer, Vishay Siliconix
SI2333DS-T1-GE3 MOSElectro-Films (EFI) / Vishay