SI2333DDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2333DDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance, low on-resistance P-channel power MOSFET in a small surface mount package.

Product Features and Performance

Trench MOSFET technology

Low on-resistance

Fast switching speed

High power density

Robust design

Suitable for high-frequency switching applications

Product Advantages

Efficient power conversion

Compact design

Reliable performance

Ease of use

Key Technical Parameters

Drain to Source Voltage (Vdss): 12 V

Gate-Source Voltage (Vgs) Max: ±8 V

On-resistance (Rds(on)) Max: 28 mΩ @ 5 A, 4.5 V

Continuous Drain Current (Id) @ 25°C: 6 A

Input Capacitance (Ciss) Max: 1275 pF @ 6 V

Power Dissipation (Max): 1.2 W (Ta), 1.7 W (Tc)

Quality and Safety Features

RoHS3 compliant

Trench MOSFET technology for high reliability

Designed and manufactured to rigorous quality standards

Compatibility

Surface mount package (SOT-23-3)

Compatible with a wide range of electronic circuits and applications

Application Areas

Switching power supplies

Motor drives

Battery chargers

LED lighting

Industrial electronics

Product Lifecycle

Current product offering

No known plans for discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Efficient power conversion with low on-resistance

Compact and easy-to-use surface mount package

Robust design for reliable performance

Suitable for a wide range of high-frequency switching applications

Compliance with RoHS3 requirements