Manufacturer Part Number
SI2333CDS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI2333CDS-T1-E3 is a P-Channel MOSFET transistor from the TrenchFET series, designed for a variety of applications.
Product Features and Performance
P-Channel MOSFET design
Low on-resistance of 35 mOhm @ 5.1A, 4.5V
Operating temperature range of -55°C to 150°C
Drain-to-Source voltage of 12V
Gate-to-Source voltage of ±8V
Continuous Drain Current of 7.1A at 25°C
Input Capacitance of 1225 pF @ 6V
Power Dissipation of 1.25W at Ta, 2.5W at Tc
Gate Charge of 25 nC @ 4.5V
Product Advantages
Efficient power switching
High-temperature operation
Small package size
Key Technical Parameters
Vdss: 12V
Vgs (Max): ±8V
Rds On (Max): 35 mOhm
Id (Continuous): 7.1A
Ciss (Max): 1225 pF
Power Dissipation: 1.25W (Ta), 2.5W (Tc)
Quality and Safety Features
RoHS3 Compliant
Suitable for surface mount applications
Compatibility
Suitable for a variety of electronic circuits and power management applications
Application Areas
Power management circuits
Motor control
Switching power supplies
Audio amplifiers
General-purpose electronic devices
Product Lifecycle
Current production model
Replacements and upgrades available
Key Reasons to Choose This Product
Efficient power switching performance
Wide operating temperature range
Small surface-mount package
RoHS compliance
Suitable for various power management and electronic applications