Manufacturer Part Number
SI2329DS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
RoHS3 Compliant
Trench MOSFET Technology
P-Channel MOSFET
Low On-Resistance
High Drain Current Capability
Product Advantages
Optimized for Power Switching Applications
Efficient Power Conversion
Reliable and Robust Performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 8V
Gate to Source Voltage (Vgs) Max: ±5V
On-Resistance (Rds(on)) Max: 30mΩ @ 5.3A, 4.5V
Continuous Drain Current (Id) @ 25°C: 6A
Input Capacitance (Ciss) Max: 1485pF @ 4V
Power Dissipation Max: 2.5W
Gate Charge (Qg) Max: 29nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Suitable for Harsh Environments (-55°C to 150°C)
Compatibility
SOT-23-3 (TO-236) Surface Mount Package
Tape & Reel (TR) Packaging
Application Areas
Power Switching Applications
DC-DC Converters
Motor Drives
Power Management Circuits
Product Lifecycle
Currently in Production
Availability of Replacements or Upgrades from Manufacturer
Key Reasons to Choose This Product
Optimized for Efficient Power Conversion
Reliable and Robust Performance in Harsh Environments
Low On-Resistance for High Efficiency
High Drain Current Capability
Compact Surface Mount Packaging