Manufacturer Part Number
SI2328DS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Trench Technology
Low On-Resistance
High Power Handling Capability
Product Advantages
Compact SOT-23-3 (TO-236) Package
Wide Operating Temperature Range (-55°C to 150°C)
High Drain-Source Voltage (100V)
Low Gate-Source Voltage (±20V)
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
On-Resistance (Rds(on)): 250mΩ @ 1.5A, 10V
Continuous Drain Current (Id): 1.15A @ 25°C
Power Dissipation (Max): 730mW
Gate Charge (Qg): 5nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Tape & Reel Packaging
Compatibility
Suitable for Surface Mount Applications
Application Areas
Power Management
Switching Circuits
Amplifiers
Motor Control
Product Lifecycle
Currently Available
No Known Discontinuation or Replacement
Several Key Reasons to Choose This Product
Efficient Trench MOSFET Technology
Compact and Space-Saving Package
Wide Operating Temperature Range
High Power Handling Capability
Low On-Resistance for Low Power Losses