SI2325DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2325DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel enhancement-mode TrenchFET MOSFET with low on-resistance.

Product Features and Performance

Low on-resistance of 1.2 Ohm @ 500 mA, 10 V

High drain-to-source voltage of 150 V

Wide operating temperature range of -55°C to 150°C

Input capacitance of 510 pF @ 25 V

Low gate charge of 12 nC @ 10 V

Power dissipation of 750 mW

Product Advantages

Excellent power efficiency

Reliable performance in high-temperature applications

Compact surface-mount packaging

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 150 V

Gate-to-Source Voltage (Vgs): ±20 V

Continuous Drain Current (Id): 530 mA

On-Resistance (Rds(on)): 1.2 Ohm @ 500 mA, 10 V

Input Capacitance (Ciss): 510 pF @ 25 V

Power Dissipation (Pd): 750 mW

Quality and Safety Features

ROHS3 compliant

AEC-Q101 qualified

Compatibility

Surface mount, SOT-23-3 (TO-236) package

Application Areas

Switching power supplies

DC-DC converters

Motor drives

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and available. No discontinuation or replacement plans are known at this time.

Key Reasons to Choose This Product

Excellent power efficiency and reliability

Compact surface-mount packaging

Wide operating temperature range

Suitable for various power conversion and motor control applications