Manufacturer Part Number
SI2323DS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
Surface Mount Mounting Type
TrenchFET Series
P-Channel MOSFET
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Product Advantages
Efficient power management
High current handling capability
Low on-resistance
Fast switching speed
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C ~ 150°C (TJ)
Compatibility
Manufacturer's packaging: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Application Areas
Power management
Switching applications
Amplifier circuits
Motor control
Telecommunications equipment
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
Efficient power management
High current handling capability
Low on-resistance
Fast switching speed
RoHS3 compliant
Wide operating temperature range