SI2323CDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2323CDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This is a P-Channel MOSFET transistor from the TrenchFET series.

Product Features and Performance

20V Drain to Source Voltage

39mOhm maximum On-Resistance at 4.6A, 4.5V

6A Continuous Drain Current at 25°C

1090pF maximum Input Capacitance at 10V

25W Power Dissipation at 25°C, 2.5W at 25°C case

Product Advantages

Low on-resistance for efficient power switching

High current handling capability

Compact SOT-23-3 surface mount package

Key Technical Parameters

Vds: 20V

Vgs (Max): ±8V

Rds On (Max): 39mOhm

Id (Continuous): 6A

Ciss (Max): 1090pF

Power Dissipation: 1.25W (Ta), 2.5W (Tc)

Quality and Safety Features

RoHS3 Compliant

Operating Temperature Range: -55°C to 150°C

Compatibility

Compatible with standard SOT-23-3 (TO-236) package

Application Areas

Power switching and amplification circuits

Motor control

Battery-powered devices

Portable electronics

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent performance-to-size ratio

High current capability in a compact package

Low on-resistance for efficient power switching

Wide operating temperature range